1 dual n-channel 2.5-v (g-s) mosfet features ? halogen-free option av ailable ? trenchfet ? power mosfets pr oduct summary v ds (v) r ds(on) ( )i d (a) 20 0.022 at v gs = 4.5 v 6.6 0.040 at v gs = 2.5 v 5.5 d s 1 s 1 g 1 1 2 3 4 8 7 6 5 d s 2 s 2 g 2 tssop-8 t op v i e w notes: a. surfa c e mou nted on fr4 board, t 10 s . * pb con taining terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symb ol 10 s steady state unit drain-source voltage v ds 20 v gate -source v oltage v gs 12 contin uous drain current (t j = 150 c ) a t a = 25 c i d 6.6 5 .2 a t a = 70 c 5.5 3 .5 pulsed dr ain current i dm 30 continuous sou r ce current (diode conduction) a i s 1.5 1 .0 max imum power dissipation a t a = 25 c p d 1.5 1 .0 w t a = 70 c 0.96 0 .64 ope rating junction and storage temperature range t j , t stg - 55 to 150 c thermal resist ance rat ings pa rameter symbol t yp. max. unit maximum junction-to-ambient a t 10 s r thja 72 83 c / w steady state 100 120 maximum junction-to-foot (drain) steady state r thjf 55 70 a v aila b le p b -free rohs* compliant g1 s1 g2 d s2 d www.din-tek.jp dt m 820 5
2 not e s: a. for design aid only; not subject to production testing. b. p ulse test; pulse width 300 s, duty cycle 2 %. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typi cal ch aracteristics 25 c, unless otherwise noted s pecifications t j = 25 c, unless otherwise noted pa ram e ter symb ol test conditions min. typ. a max. u n it static gate th reshold v oltage v gs(t h) v ds = v gs , i d = 25 0 a 0.6 1.6 v gate-body leakage i gss v ds = 0 v, v gs = 4 .5 v 200 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v , v gs = 0 v, t j = 70 c 25 on-state drain current b i d( on) v ds 5 v, v gs = 4.5 v 30 a dr a in-source on-state resistance b r ds(o n) v gs = 4.5 v , i d = 6.5 a 0.0165 0.022 v gs = 2. 5 v, i d = 5.5 a 0.033 0.040 forward transconductance b g fs v ds = 10 v, i d = 6.5 a 30 s diode f orw ard voltage b v sd i s = 1.5 a, v gs = 0 v 0.71 1.2 v dy namic a t otal gate charge q g v ds = 10 v, v gs = 4.5 v, i d = 6.5 a 12 18 nc gate-s o urce charge q gs 2.2 gate-dr a in charge q gd 3.6 tu r n - o n d e l ay t i m e t d(on ) v dd = 10 v, r l = 10 i d ? 1 a, v gen = 4.5 v , r g = 6 245 365 ns rise time t r 330 495 t ur n-off delay time t d(o ff) 860 1 300 fa ll time t f 510 765 gate-c urrent vs. gate-so u rce voltage 0 2 4 6 8 10 0 3 6 9 12 15 18 - gate current (ma) i gss v gs - gate-to-source voltage (v) gate curren t vs. gate -source voltage 0369 1 2 15 0.01 100 10000 t j = 25 c - gate current (a) i gss 0.1 1 10 1000 v gs - gate-to-source voltage (v) t j = 150 c www.din-tek.jp dt m 820 5
3 typica l c har acteristics 25 c, unless otherwise noted output characteristic s on-resistance vs. drain current on-resistance vs. junction temperature 0 5 10 15 20 25 30 01234 5 v gs = 5 thru 3 v 2 v 2.5 v v ds - dr ain-to-source voltage (v) - dr ain current (a) i d 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 v gs = 4.5 v v gs = 2.5 v - on-resistance ( ) r ds(on) i d - dr ain current (a) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 v gs = 4.5 v i d = 6.5 a t j - j unction temperature (c) (normaliz ed) - on-resistance r ds(on) transfer characteristics gat e charge source-drain diode forward voltage 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 125 c - 55 c v gs - gate-to-source voltage (v) - dr ain current (a) i d 25 c 0 1 2 3 4 5 0 3 6 9 12 15 v ds = 10 v i d = 6.5 a - gate-to-source v oltage (v) q g - total gate charge (nc) v gs 1.2 1.5 0.1 10 40 0 0.3 0.6 0.9 t j = 25 c t j = 150 c v sd - source-to-dr ain voltage (v) - source current (a) i s 1 www.din-tek.jp dt m 820 5
4 ty pi cal ch aracteristics 25 c, unless otherwise noted on-resistance vs. gate-to -source voltage single pulse power 0.00 0.01 0.02 0.03 0.04 0.05 0 123 456 i d = 6.5 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0.001 0 1 160 200 80 10 0.1 po w er (w) time (s) 40 120 0.01 thres hold voltage safe operating area, junction-to-case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 i d = 250 a var iance (v) v gs(th) t j - t emperature (c ) 100 1 0.1 1 1 0 100 0.01 10 1 ms - dr ain current (a) i d 0.1 limited by r ds(on) * t c = 25 c single pulse 10 ms 100 ms dc 10 s 1 s v ds - drain - to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified nor m alized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 100 600 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle , d = 2. p er unit base = r th j a = 11 5 c/w 3. t jm - t a = p dm z th j a (t ) t 1 t 2 t 1 t 2 notes: 4. surf ace mounted p dm square w a ve pulse duration (s) normaliz ed ef f ective t ransient thermal impedance 10 www.din-tek.jp dt m 820 5
5 typica l c har acteristics 25 c, unless otherwise noted normalize d thermal transient impedance, junction-to-foot 10 -3 10 -2 11 0 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w a ve pulse duration (s) normaliz ed ef f ective transient thermal impedance www.din-tek.jp dt m 820 5
e1 e c r 0.10 (4 corners) b r 0.10 corners) a a2 a1 d l l1 k1 0.25 (gage plane) e 1
jedec part number: mo-153
dim min nom max a ? ? 1.20 a 1 0.05 0.10 0.15 a 2 0.80 1.00 1.05 b 0.19 0.28 0.30 c ? 0.127 ? d 2.90 3.00 3.10 e 6.20 6.40 6.60 e 1 4.30 4.40 4.50 e ? 0.65 ? l 0.45 0.60 0.75 l 1 0.90 1.00 1.10 y ? ? 0.10 k1 0 3 6 ecn: s-03946?rev. g, 09-jul-01 dwg: 5844 package information www.din-tek.jp
1 application note reco mmended minimum pads for tssop-8 0.262 (6.655) recommended mi nimum pads dimensions in inches/(mm) 0.092 (2.337) 0.182 (4.623) 0.040 (1.016) 0.026 (0.660) 0.014 (0.356) 0.012 (0.305) return to index retu r n to index application note www.din-tek.jp
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